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To safely oxidate the total carbon in the silicon carbide to CO 2, resistance furnaces require the addition of accelerators such as lead borate or tin powder. Due to a temperature of approx. 2,500 °C the oxidation of silicon carbide tends to take place more quickly and more reliably in an induction furnace; moreover, the measurement results show fewer variations (see table 2).
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Silicon carbide nanowires (NWs), that were over 200 Î¼m in length and 20â€“200 nm in diameter, were prepared by high-pressure reaction from SiBONC powder tablets. Annealing temperatures between 1,500 Â°C and 1,600 Â°C and Si/B molar ratios between 70:30 and 60:40 were suitable for the
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